Comparative Study on in 0.15Ga0.85As, InP, and Si/SiO2 n-MOSFETs through Monte Carlo Analysis

Abstract

The present study aims to carry out a theoretical investigation on the electronic transport properties of nanometer-scale metal-oxide semiconductor field-effect transistor (MOSFET) devices based on Si and various III–V compounds, using the Monte Carlo method and considering the quantum effects. In this regard, the electronic transport properties of InP-based MOSFET and Si-based MOSFET were assessed and compared with results previously published for transistors based on the same materials and having the same gate length. Afterwards, the advantages of a MOSFET device made of an In_0.15Ga_0.85As compound semiconductor as new channel material, and a high-k gate dielectric oxide layer (Al₂O₃), were explored. All calculations were carried out at the temperature T = 300° K, using finite element Monte Carlo simulations which incorporate quantum corrections and accounting for scattering mechanisms, such as polar optical phonons, non-polar optical phonons, acoustic phonons, and inter-valley phonons. Local magnitude quantities, such as the electric field, speed of carriers and their energies in MOSFET transistors with nano-metric gate length, were also analysed.