Performance improvement of CZTS-based solar cells with In2S3 and ZnO dielectric layer as window layer and comparison with CdS layer using SCAPS-1D

Abstract

In the present work, we simulate the i-ZnO/In2S3/p-CZTS/Mo structure based on copper-zinc-tin-sulfur (CZTS). CZTS has become a candidate material for new photovoltaic solar cell due to its excellent properties Where we found that In2S3 is an excellent candidate for the replacement of the CdS dielectric layer in CZTS solar cells. Non-toxic, it has been shown to be a suitable surface composition adaptation for the replacement of the CdS dielectric layer by In2S3. To obtain an interface quality with CZTS layer that makes it possible to control the phenomenon of fault propagation of this interface. SCAPS-1Dsoftware used for simulation CZTS/In2S3/ZnO Thin-film solar cells where the main parts are p-CZTS absorber layer and n-In2S3 insulating layer.